We show, from first-principles calculations, that the hole-doped side of FeAs-based compounds is different from its electron-doped counterparts. The electron side is characterized as Fermi surface nesting, and SDW-to-NM quantum critical point (QCP) is realized by doping. For the hole-doped side, on the other hand, orbital-selective partial orbital ordering develops together with checkboard antiferromagnetic (AF) ordering without lattice distortion. A unique SDW-to-AF QCP is achieved, and J2=J1/2 criteria (in the approximate J_1&J_2 model) is satisfied. The observed superconductivity is located in the vicinity of QCP for both sides.
@article{arxiv.0807.1401,
title = {Electron-hole Asymmetry and Quantum Critical Point in Hole-doped BaFe$_2$As$_2$},
author = {Gang Xu and Haijun Zhang and Xi Dai and Zhong Fang},
journal= {arXiv preprint arXiv:0807.1401},
year = {2009}
}