Manipulating carrier density through gate effects, both in electrostatic charge storage and electrochemical intercalation mode, offers powerful control over material properties, although commonly restricted to ultra-thin films or van der Waals materials. Here we demonstrate the application of gate-driven carrier modulation in the microdevice of magnetic Weyl semimetal Co3Sn2S2, fabricated from a bulk single crystal via focused ion beam (FIB). We discovered a Li-intercalated phase LixCo3Sn2S2 featuring electron doping exceeding 5*1021 cm-3, resulting in the Fermi energy shift of 200 meV. The carrier density dependent anomalous Hall conductivity shows fair agreement with density functional theory (DFT) calculation, which also predicts intercalated Li+ ion stabilization within the anion layer while maintaining the kagome-lattice intact. This likely explains the observed rigid band behavior and constant Curie temperature, contrasting with magnetic site substitution experiments. Our findings suggest ionic gating on FIB devices broadens the scope of gate-tuning in quantum materials.
@article{arxiv.2312.17547,
title = {Electron-doped magnetic Weyl semimetal LixCo3Sn2S2 by bulk-gating},
author = {Hideki Matsuoka and Yukako Fujishiro and Susumu Minami and Takashi Koretsune and Ryotaro Arita and Yoshinori Tokura and Yoshihiro Iwasa},
journal= {arXiv preprint arXiv:2312.17547},
year = {2026}
}