For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show that opposite polarizations in ferroelectric domains of a folded hBN layer can imprint local n and p doping in a semiconducting transition metal dichalcogenide WSe2 monolayer. We demonstrate that WSe2 can be used as an optical probe of ferroelectricity in hBN and show that the doping density and type can be controlled with the position of the semiconductor with respect to the ferroelectric interface. Our results establish the ferroelectric hBN/WSe2 van der Waals stacking as a promising optoelectronic structure.
@article{arxiv.2307.08146,
title = {Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride},
author = {Jules Fraunié and Rayan Jamil and Richard Kantelberg and Sébastien Roux and Lionel Petit and Emmanuel Lepleux and Louis Pacheco and Kenji Watanabe and Takashi Taniguchi and Vincent Jacques and Laurent Lombez and Mikhail M. Glazov and Benjamin Lassagne and Xavier Marie and Cedric Robert},
journal= {arXiv preprint arXiv:2307.08146},
year = {2023}
}