Electrically Tunable Valley-Based Qubits in Moiré Quantum Dots
Mesoscale and Nanoscale Physics
2026-08-05 v1
Abstract
The search for scalable, electrically controlled qubits remains a central challenge in quantum technology. We introduce gate-defined moir\'e quantum dots as a promising platform for valley-based qubits. Moir\'e engineering resolves the central conflict of valley physics: momentum-space separation protects the states, while the enlarged moir\'e length scale allows smooth gates to mix them controllably. Dot geometry and confinement strength program valley hybridization, while a displacement field controls detuning, providing two noncommuting electrostatic axes for qubit control.
Cite
@article{arxiv.2608.05229,
title = {Electrically Tunable Valley-Based Qubits in Moiré Quantum Dots},
author = {Yasser Saleem and Pawel Potasz and Ewelina M. Hankiewicz},
journal= {arXiv preprint arXiv:2608.05229},
year = {2026}
}
Comments
6 pages, 4 figures; includes 4-page Supplemental Material with 1 figure