The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 {\mu}V K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena.
@article{arxiv.2406.16194,
title = {Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures},
author = {Gabriele Pasquale and Zhe Sun and Kenji Watanabe and Takashi Taniguchi and Andras Kis},
journal= {arXiv preprint arXiv:2406.16194},
year = {2024}
}