Electrical transport properties of high quality Bi-2223 crystal

Yu. Eltsev; S. Lee; K. Nakao; S. Tajima

doi:10.1088/0953-2048/23/5/055007

Electrical transport properties of high quality Bi-2223 crystal

Superconductivity 2015-05-14 v3

Authors: Yu. Eltsev , S. Lee , K. Nakao , S. Tajima

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Abstract

We have studied electrical transport properties of a high quality Bi2Sr2Ca2Cu3O10+x crystal below a superconducting critical temperature, Tc. In magnetic fields B parallel to the c-axis just above a voltage response onset resistance vs temperature data are well fitted to the vortex-glass model. Obtained from the vortex-glass analysis a melting transition boundary for Bi-2223 crystal shifted towards lower temperatures compared to previously reported data for a (Bi,Pb)-2223 single crystal. The critical current density, Jc, of Bi-2223 crystals is close to presented elsewhere Jc values for Bi-2223 tapes suggesting a principal role of weak intrinsic pinning properties of Bi-2223 as a main limiting factor of Jc of Bi-2223 conductors.

Keywords

Bi-2223 crystal electrical transport vortex-glass model melting transition critical current density intrinsic pinning

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@article{arxiv.0909.1628,
  title  = {Electrical transport properties of high quality Bi-2223 crystal},
  author = {Yu. Eltsev and S. Lee and K. Nakao and S. Tajima},
  journal= {arXiv preprint arXiv:0909.1628},
  year   = {2015}
}

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7 pages, 1 table, 4 figures

Electrical transport properties of high quality Bi-2223 crystal

Abstract

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