Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

S. Friedemann; N. Oeschler; C. Krellner; C. Geibel; F. Steglich

doi:10.1016/j.physb.2009.07.041

Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

Strongly Correlated Electrons 2010-07-08 v1

Authors: S. Friedemann , N. Oeschler , C. Krellner , C. Geibel , F. Steglich

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Abstract

We report low-temperature measurements of the electrical resistivity of Yb(Rh1-xCox)2Si2 single crystals with 0 <= x <= 0.12. The isoelectronic substitution of Co on the Rh site leads to a decrease of the unit cell volume which stabilizes the antiferromagnetism. Consequently, the antiferromagnetic transition temperature increases upon Co substitution. For x = 0.07 Co content a subsequent low-temperature transition is observed in agreement with susceptibility measurements and results on YbRh2Si2 under hydrostatic pressure. Above the Neel transition the resistivity follows a non-Fermi liquid behavior similar to that of YbRh2Si2.

Keywords

electrical resistivity Yb(Rh1-xCox)2Si2 single crystals antiferromagnetism non-Fermi liquid behavior low-temperature measurements isoelectronic substitution

Cite

@article{arxiv.0906.2894,
  title  = {Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures},
  author = {S. Friedemann and N. Oeschler and C. Krellner and C. Geibel and F. Steglich},
  journal= {arXiv preprint arXiv:0906.2894},
  year   = {2010}
}

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4 pages, submitted to SCES08

Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

Abstract

Keywords

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