In this paper, electrical and electronic properties of strained mono-layer InTe for two structures, α, and β phases, is investigated. The band structure is obtained using density functional theory (DFT). The minimum energy and effective mass of the conduction band and second conduction band for different strains are calculated. A FET with using InTe as the channel material is investigated. Voltage-current characteristics of InTe FET is calculated and ION/IOFF ratio is obtained with respect to biaxial strain.
@article{arxiv.1905.04879,
title = {Electrical and ELectronic Properties of Strained Mono-layer InTe},
author = {Shoeib Babaee Touski and Mohammad Ariapour and Manouchehr Hosseini},
journal= {arXiv preprint arXiv:1905.04879},
year = {2019}
}