Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

C. D. Weis; C. C. Lo; V. Lang; A. M. Tyryshkin; R. E. George; K. M. Yu; J. Bokor; S. A. Lyon; J. J. L. Morton; T. Schenkel

doi:10.1063/1.4704561

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Materials Science 2015-06-04 v2

Authors: C. D. Weis , C. C. Lo , V. Lang , A. M. Tyryshkin , R. E. George , K. M. Yu , J. Bokor , S. A. Lyon , J. J. L. Morton , T. Schenkel

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.

Keywords

electron spin resonance bismuth donors isotopically enriched silicon-28 ion implantation spin qubit thermal annealing spin coherence time

Cite

@article{arxiv.1202.1560,
  title  = {Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28},
  author = {C. D. Weis and C. C. Lo and V. Lang and A. M. Tyryshkin and R. E. George and K. M. Yu and J. Bokor and S. A. Lyon and J. J. L. Morton and T. Schenkel},
  journal= {arXiv preprint arXiv:1202.1560},
  year   = {2015}
}

Comments

4 pages, 4 figures

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Abstract

Keywords

Cite

Comments

Related papers