Two-dimensional (2D) half-metallic materials are highly desirable for nanoscale spintronic applications. Here, we propose a new mechanism that can achieve half-metallicity in 2D ferromagnetic (FM) material with two-layer magnetic atoms by electric field tuning. We use a concrete example of experimentally synthesized CrSBr monolayer to illustrate our proposal through the first-principle calculations. It is found that the half-metal can be achieved in CrSBr within appropriate electric field range, and the corresponding amplitude of electric field intensity is available in experiment. Janus monolayer Cr2S2BrI is constructed, which possesses built-in electric field due to broken horizontal mirror symmetry. However, Cr2S2BrI without and with applied external electric field is always a FM semiconductor. A possible memory device is also proposed based on CrSBr monolayer. Our works will stimulate the application of 2D FM CrSBr in future spintronic nanodevices.
@article{arxiv.2308.03430,
title = {Electric-field induced half-metal in monolayer CrSBr},
author = {Hao-Tian Guo and San-Dong Guo and Yee Sin Ang},
journal= {arXiv preprint arXiv:2308.03430},
year = {2023}
}