Efficient Mode Conversion at 1064 nm via Bilayer Inverse Taper on Thin-Film Lithium Niobate
Abstract
Efficient fiber-to-chip coupling remains challenging for thin-film lithium niobate (TFLN) devices operating at 1064 nm. Here, we fabricate and characterize an on-chip optical mode converter based on a bilayer inverse taper. The proposed structure demonstrated a coupling loss of 1.9 dB per facet for the TE mode, with a 1 dB bandwidth spanning 1055--1085 nm. The polarization-dependent alignment tolerance was measured along the lateral and vertical directions. Theoretical and simulation analyses indicate that, when using a lensed fiber with a mode field diameter of 2.5 m, the coupling loss can be reduced to as low as 0.48 dB per facet. These results demonstrate the feasibility of providing a high-efficiency solution for on-chip optical coupling at 1064 nm.
Keywords
Cite
@article{arxiv.2608.00833,
title = {Efficient Mode Conversion at 1064 nm via Bilayer Inverse Taper on Thin-Film Lithium Niobate},
author = {Ruidong Xue and Jobayer Hossain and Joshua Arnold and Jiuyi Zhang and Xiaofeng Zhu and Marco Moller de Freitas and Christopher J. Cullen and Shouyuan Shi and Peng Yao and Timothy Creazzo and Dennis Prather},
journal= {arXiv preprint arXiv:2608.00833},
year = {2026}
}
Comments
10 pages, 5 figures