English

Effects of Small Island Mobility on Growth in Molecular Beam Epitaxy

Materials Science 2009-10-28 v2

Abstract

The effects of mobility of small islands on island growth in molecular beam epitaxy are studied. It is shown that small island mobility affects both the scaling and morphology of islands during growth. Three microscopic models are considered, in which the critical island sizes are i=1,2i^*=1,2 and 3 (such that islands of size sis \le i^* are mobile while islands of size si+1s \ge i^{\ast}+1 are immobile). As i^* increases, islands become more compact, while the exponent γ\gamma which relates the island density to deposition rate increases. The morphological changes are quantified by using fractal analysis. It is shown that the fractal dimensions are rather insensitive to changes in i^*. However, the prefactors provide a quantitative measure of the changing morphologies.

Keywords

Cite

@article{arxiv.cond-mat/9611093,
  title  = {Effects of Small Island Mobility on Growth in Molecular Beam Epitaxy},
  author = {I. Furman and O. Biham},
  journal= {arXiv preprint arXiv:cond-mat/9611093},
  year   = {2009}
}

Comments

25 pages of text, RevTeX, additional 8 figures in 10 PS files. Replaced version include some minor changes, notation, etc. To be published in: Phys. Rev B, Vol. 55 (1997)