Effects of Polaron Formation in Semiconductor Quantum Dots on Transport Properties
Abstract
We theoretically examine the effects of polaron formation in quantum dots on the transport properties. When a separation between two electron-levels in a quantum dot matches the energy of the longitudinal optical (LO) phonons, the polarons are strongly formed. The Rabi splitting between the levels is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of electrons and phonons.
Keywords
Cite
@article{arxiv.cond-mat/0304236,
title = {Effects of Polaron Formation in Semiconductor Quantum Dots on Transport Properties},
author = {Tomoki Tasai and Mikio Eto},
journal= {arXiv preprint arXiv:cond-mat/0304236},
year = {2009}
}
Comments
14 pages, 5 figures; J. Phys. Soc. Jpn, 72, No.6 (2003), in press