This paper reports the effect of Ag-doping on electrical properties of a-Sb2Se3 in the temperature range 240-340 K and frequency range 5 Hz to 100 kHz. The variation of transport properties with thermal doping has been studied. Ag-doping produced two homogeneous phases in the sample and which are found to be voltage dependent in the temperature range studied and frequency dependent in lower frequency region (0.1 - 10 kHz). Activation energy Eg and C' [=σ0 exp (γ/k), where γ, is the temperature coefficient of the band gap] calculated from dc conductivity has been found to vary from 0.42 eV to 0.26 eV and 41.08x10−6 to 2.902x10-6 \ohm−1cm−1 respectively. Ag-doping can be used to make the sample more useful in device applications.
@article{arxiv.cond-mat/0604158,
title = {Effect of silver doping on the electrical properties of a-Sb$_2$Se$_3$},
author = {Sanjeev Gautam and Anup Thakur and S. K. Tripathi and Navdeep Goyal},
journal= {arXiv preprint arXiv:cond-mat/0604158},
year = {2011}
}