Effect of Piezoelectric Polarization on Phonon Relaxation Rates in Binary Wurtzite Nitrides

Bijay Kumar Sahoo

doi:10.1007/s10853-011-6087-2

Effect of Piezoelectric Polarization on Phonon Relaxation Rates in Binary Wurtzite Nitrides

Materials Science 2015-05-30 v1

Authors: Bijay Kumar Sahoo

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Abstract

The piezoelectric (PZ) polarization effect enhances the phonon group velocity in wurtzite nitrides. This enhancement influences the phonon relaxation rates. We calculate the modified phonon relaxation rates in binary wurtzite nitrides (GaN, AlN and InN) by considering process like umklapp process, point defect, dislocation, boundary and phonon-electron scattering. The result will be useful to study the effect of PZ polarization on thermal conductivity of binary wurtzite nitrides (GaN, AlN and InN).

Keywords

piezoelectric polarization phonon relaxation rates wurtzite nitrides GaN AlN InN thermal conductivity

Cite

@article{arxiv.1109.0870,
  title  = {Effect of Piezoelectric Polarization on Phonon Relaxation Rates in Binary Wurtzite Nitrides},
  author = {Bijay Kumar Sahoo},
  journal= {arXiv preprint arXiv:1109.0870},
  year   = {2015}
}

Comments

3 figures, submitted to solid state communications

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