Effect of Interlayer Spin-Flip Tunneling for Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion Systems
Mesoscale and Nanoscale Physics
2015-02-24 v2 Strongly Correlated Electrons
Abstract
We investigate the effect of the interlayer spin-flip tunneling for the interlayer magnetoresistance under magnetic fields in alpha-(BEDT-TTF)2I3, which is a multilayer massless Dirac fermion system under pressure. The mean field of the spin-flip correlation associated with the interlayer Coulomb interaction enables the interlayer spin-flip tunneling. Assuming the non-vertical interlayer spin-flip tunneling, we calculate the interlayer magnetoresistance using the Kubo formula. The crossover magnetic field, at which the interlayer magnetoresistance changes from positive to negative is shifted by the Zeeman energy and in good agreement with the experiment.
Keywords
Cite
@article{arxiv.1406.7110,
title = {Effect of Interlayer Spin-Flip Tunneling for Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion Systems},
author = {Kenji Kubo and Takao Morinari},
journal= {arXiv preprint arXiv:1406.7110},
year = {2015}
}