Control over thickness, size, and area of chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) flakes is crucial for device application. Herein, we report a quantitative comparison of CVD synthesis of MoS2 on SiO2/Si substrate using three different precursors viz., molybdenum trioxide (MoO3), ammonium heptamolybdate (AHM), and tellurium (Te). A three-step chemical reaction mechanism of evolution of MoS2 from MoO3 micro-crystals is proposed for MoO3 precursor. Furthermore, a strategy based on growth temperature and ratio of amount of precursors is developed to systematically control thickness and area of MoS2 flakes. Our findings show that for large-sized crystalline monolayer MoS2 flakes, MoO3 is a better choice than AHM and Te-assisted synthesis. Moreover, Te as growth promoter, can lower down growth temperature by 250C. This study can be further used to fabricate MoS2 based high-performance electronic devices such as photodetectors, thin film transistors, and sensors.
@article{arxiv.2003.12300,
title = {Effect of different precursors on CVD growth of molybdenum disulfide},
author = {Aditya Singh and Monika Moun and Rajendra Singh},
journal= {arXiv preprint arXiv:2003.12300},
year = {2020}
}