Dynamical mean-field studies of metal-insulator transitions
Disordered Systems and Neural Networks
2009-10-30 v1 Strongly Correlated Electrons
Abstract
We discuss the successes of the dynamical mean field (DMF) approach to metal insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.
Keywords
Cite
@article{arxiv.cond-mat/9706231,
title = {Dynamical mean-field studies of metal-insulator transitions},
author = {V. Dobrosavljevic and G. Kotliar},
journal= {arXiv preprint arXiv:cond-mat/9706231},
year = {2009}
}
Comments
18 pages; Contribution to the Royal Society Discussion Meeting on "The Metal-Non Metal Transition in Macroscopic and Microscopic Systems", March 5-6, 1997