Dynamic Rowhammer Threshold Management:Temperature-Aware Threshold Degradation for In-DRAM Defenses

Aziz Alajmi; Hoeseok Yang

Dynamic Rowhammer Threshold Management:Temperature-Aware Threshold Degradation for In-DRAM Defenses

Hardware Architecture 2026-07-11 v1 Cryptography and Security

Authors: Aziz Alajmi , Hoeseok Yang

Abstract

In-DRAM Rowhammer defenses pin the mitigation threshold at manufacture time, yet the true Rowhammer Threshold (TRHD) varies with runtime temperature. We propose \emph{Dynamic Rowhammer Threshold Management}, a defense-agnostic runtime layer that re-sources each defense's threshold from the observed temperature once per epoch via a linear- $T$ model with a VRD-motivated guardband $g$ , projecting the result onto SALT-C, PRAC, and TRR through each defense's threshold parameter. A decoupled oracle that scales physical TRHD per-DIMM by $\delta \sim \mathrm{N}(1, \sigma)$ breaks model self-consistency. The layer drives PRAC's 72 staleness breaches at 85 $^\circ$ C to zero; at $\sigma{=}0.10$ , sweeping $g$ collapses PRAC breaches from 38.4 ( $g{=}1.0$ ) to 9.6 ( $g{=}0.9$ ). SALT-C drops from 10 nominal-static breaches to 2 (Dynamic) to 0 (bootstrap), at $\leq$ 5.1\% latency. TRR is capacity-limited; the layer acts as a diagnostic.

Cite

@article{arxiv.2607.10392,
  title  = {Dynamic Rowhammer Threshold Management:Temperature-Aware Threshold Degradation for In-DRAM Defenses},
  author = {Aziz Alajmi and Hoeseok Yang},
  journal= {arXiv preprint arXiv:2607.10392},
  year   = {2026}
}

Comments

Presented at the Sixth Workshop on DRAM Security (DRAMSec 2026), June 2026