Driven electronic bridge processes via defect states in $^{229}$Th-doped crystals
Abstract
The electronic defect states resulting from doping Th in CaF offer a unique opportunity to excite the nuclear isomeric state Th at approximately 8 eV via electronic bridge mechanisms. We consider bridge schemes involving stimulated emission and absorption using an optical laser. The role of different multipole contributions, both for the emitted or absorbed photon and nuclear transition, to the total bridge rates are investigated theoretically. We show that the electric dipole component is dominant for the electronic bridge photon. In contradistinction, the electric quadrupole channel of the Th isomeric transition plays the dominant role for the bridge processes presented. The driven bridge rates are discussed in the context of background signals in the crystal environment and of implementation methods. We show that inverse electronic bridge processes quenching the isomeric state population can improve the performance of a solid-state nuclear clock based on Th.
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Cite
@article{arxiv.2103.10789,
title = {Driven electronic bridge processes via defect states in $^{229}$Th-doped crystals},
author = {Brenden S. Nickerson and Martin Pimon and Pavlo V. Bilous and Johannes Gugler and Georgy A. Kazakov and Tomas Sikorsky and Kjeld Beeks and Andreas Gruneis and Thorsten Schumm and Adriana Palffy},
journal= {arXiv preprint arXiv:2103.10789},
year = {2021}
}