Doping dependent charge injection and band alignment in organic field-effect transistors

B. H. Hamadani; H. Ding; Y. Hao; D. Natelson

doi:10.1103/PhysRevB.72.235302

Doping dependent charge injection and band alignment in organic field-effect transistors

Mesoscale and Nanoscale Physics 2007-05-23 v1 Disordered Systems and Neural Networks

Authors: B. H. Hamadani , H. Ding , Y. Hao , D. Natelson

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Abstract

We have studied metal/organic semiconductor charge injection in poly(3-hexylthiophene) (P3HT) field-effect transistors with Pt and Au electrodes as a function of annealing in vacuum. At low impurity dopant densities, Au/P3HT contact resistances increase and become nonohmic. In contrast, Pt/P3HT contacts remain ohmic even at far lower doping. Ultraviolet photoemission spectroscopy (UPS) reveals that metal/P3HT band alignment shifts dramatically as samples are dedoped, leading to an increased injection barrier for holes, with a greater shift for Au/P3HT. These results demonstrate that doping can drastically alter band alignment and the charge injection process at metal/organic interfaces.

Keywords

organic field-effect transistor charge injection band alignment doping UPS spectroscopy

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@article{arxiv.cond-mat/0512318,
  title  = {Doping dependent charge injection and band alignment in organic field-effect transistors},
  author = {B. H. Hamadani and H. Ding and Y. Hao and D. Natelson},
  journal= {arXiv preprint arXiv:cond-mat/0512318},
  year   = {2007}
}

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5 pages, 4 figures

Doping dependent charge injection and band alignment in organic field-effect transistors

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