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Doped Twisted Bilayer Graphene near Magic Angles: Proximity to Wigner Crystallization not Mott Insulation

Strongly Correlated Electrons 2018-10-15 v3 Mesoscale and Nanoscale Physics

Abstract

We devise a model to explain why twisted bi-layer graphene (TBLG) exhibits insulating behavior when ν=2,3\nu=2,3 charges occupy a unit moir\'e cell, a feature attributed to Mottness, but not for ν=1\nu=1, clearly inconsistent with Mott insulation. We compute rs=EU/EKr_s=E_U/E_K, where EUE_U and EKE_K are the potential and kinetic energies, respectively, and show that (i) the Mott criterion lies at a density 10410^4 higher than in the experiments and (ii) a transition to a series of Wigner crystalline states exists as a function of ν\nu. We find, for ν=1\nu=1, rsr_s fails to cross the threshold (rs=37r_s = 37) for the triangular lattice and metallic transport ensues. However, for ν=2\nu=2 and ν=3\nu=3, the thresholds, rs=22r_s=22, and rs=17r_s=17, respectively are satisfied for a transition to Wigner crystals (WCs) with a honeycomb (ν=2\nu=2) and kagome (ν=3\nu=3) structure. We believe, such crystalline states form the correct starting point for analyzing superconductivity.

Keywords

Cite

@article{arxiv.1804.01101,
  title  = {Doped Twisted Bilayer Graphene near Magic Angles: Proximity to Wigner Crystallization not Mott Insulation},
  author = {Bikash Padhi and Chandan Setty and Philip W. Phillips},
  journal= {arXiv preprint arXiv:1804.01101},
  year   = {2018}
}

Comments

Version accepted in Nano Letters