Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors
Mesoscale and Nanoscale Physics
2014-10-20 v1 Disordered Systems and Neural Networks
Abstract
A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g. from multiple traps, site-energy disorder and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intra-site spin relaxation) each produce different characteristic spin relaxation and spin diffusion dependences on temperature. The resulting unique experimental signatures predicted by the theory for each mechanism in organic semiconductors provide a prescription for determining the dominant spin relaxation mechanism.
Keywords
Cite
@article{arxiv.1304.3400,
title = {Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors},
author = {N. J. Harmon and M. E. Flatté},
journal= {arXiv preprint arXiv:1304.3400},
year = {2014}
}
Comments
5 pages, 2 figures. Accepted into Phys. Rev. Lett