Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

J. Sampaio; A. V. Khvalkovskiy; M. Kuteifan; M. Cubukcu; D. Apalkov; V. Lomakin; V. Cros; N. Reyren

doi:10.1063/1.4944419

Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

Mesoscale and Nanoscale Physics 2016-04-20 v1

Authors: J. Sampaio , A. V. Khvalkovskiy , M. Kuteifan , M. Cubukcu , D. Apalkov , V. Lomakin , V. Cros , N. Reyren

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Abstract

In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As a side effect, a strong Dzyaloshinskii-Moriya interaction (DMI) may arise in such systems. Here we investigate the impact of DMI on the magnetic cell performance, using micromagnetic simulations. We find that DMI strongly promotes non-uniform magnetization states and non-uniform switching modes of the magnetic layer. It appears to be detrimental for both the thermal stability of the cell and its switching current, leading to considerable deterioration of the cell performance even for a moderate DMI amplitude.

Keywords

Dzyaloshinskii-Moriya interaction MRAM thermal stability micromagnetic simulation magnetization state switching current

Cite

@article{arxiv.1601.00598,
  title  = {Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance},
  author = {J. Sampaio and A. V. Khvalkovskiy and M. Kuteifan and M. Cubukcu and D. Apalkov and V. Lomakin and V. Cros and N. Reyren},
  journal= {arXiv preprint arXiv:1601.00598},
  year   = {2016}
}

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5 pages, 3 figures

Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

Abstract

Keywords

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