Disordered quantum antiferromagnetism in doped semiconductors: Density of states approach
Strongly Correlated Electrons
2025-06-25 v3 Mesoscale and Nanoscale Physics
Abstract
We present a theoretical study of the exchange interaction in a system of spatially disordered magnetic moments. A typical example of such a system is an impurity semiconductor, whose magnetic properties are associated with the exchange interaction of the impurity atoms. In this study, we consider the case of antiferromagnetic exchange interaction, which we describe by the Heisenberg Hamiltonian. To calculate the magnetic properties of the disordered system, we employ the density of states method. Our calculations demonstrate a good quantitative agreement with the dependence of the Si:P magnetic susceptibility on temperature in a wide range of impurity concentrations and temperatures.
Keywords
Cite
@article{arxiv.2412.07305,
title = {Disordered quantum antiferromagnetism in doped semiconductors: Density of states approach},
author = {N. A. Bogoslovskiy and P. V. Petrov and N. S. Averkiev},
journal= {arXiv preprint arXiv:2412.07305},
year = {2025}
}