The deposition of boron-doped amorphous carbon thin films on SiO2 substrate was achieved via a focused ion beam-assisted chemical vapor deposition of triphenyl borane (C18H15B) and triphenyl borate (C18H15BO3). The existence of boron in the deposited film from triphenyl borane, with a precursor temperature of 90 {\deg}C, was confirmed by a core level X-ray photoelectron spectroscopy analysis. The film exhibited a semiconducting behavior with a band gap of 285 meV. Although the band gap was decreased to 197 meV after an annealing process, the film was still semiconductor. Additionally, a drastic reduction of the resistance on the deposited film by applying pressures was observed from an in-situ electrical transport measurements using a diamond anvil cell.
@article{arxiv.1908.09273,
title = {Direct Patterning of Boron-doped Amorphous Carbon Using Focused Ion Beam-assisted Chemical Vapor Deposition},
author = {Ryo Matsumoto and El Hadi S. Sadki and Hiromi Tanaka and Sayaka Yamamoto and Shintaro Adachi and Hiroyuki Takeya and Yoshihiko Takano},
journal= {arXiv preprint arXiv:1908.09273},
year = {2022}
}