We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with 350nm junction length, spectroscopic signatures were consistent with the short-junction limit, with an induced superconducting gap Δ∗≈48μeV and transmission τ≈0.94. The interaction between the highest-transmission ABS and the resonator was well described by a Jaynes-Cummings model with a vacuum Rabi splitting of approximately 6MHz. A device with junction length of 1μm showed an ABS spectrum consistent with a long junction model. Time-resolved monitoring of the readout resonator in the dispersive regime revealed gate-voltage tunable junction parity fluctuations on the timescale of seconds. Our work indicates a viable path towards hybrid quantum devices based on planar Ge.
@article{arxiv.2403.03800,
title = {Direct microwave spectroscopy of Andreev bound states in planar Ge Josephson junctions},
author = {M. Hinderling and S. C. ten Kate and M. Coraiola and D. Z. Haxell and M. Stiefel and M. Mergenthaler and S. Paredes and S. W. Bedell and D. Sabonis and F. Nichele},
journal= {arXiv preprint arXiv:2403.03800},
year = {2024}
}