English

Direct Band Gap Semiconducting Holey Graphyne: Structure, Synthesis and Potential Applications

Materials Science 2019-07-09 v1

Abstract

Here we report two-dimensional (2D) single-crystalline holey-graphyne (HGY) created an interfacial two-solvent system through a Castro-Stephens coupling reaction from 1,3,5-tribromo-2,4,6-triethynylbenzene. HGY is a new type of 2D carbon allotrope whose structure is comprised of a pattern of six-vertex and eight-vertex rings. The carbon-carbon 2D network of HGY is alternately linked between benzene rings and sp (carbon-carbon triple bond) bonding. The ratio of the sp over sp2 bonding is 50%. It is confirmed that HGY is stable by DFT calculation. The vibrational, optic, and electric properties of HGY are investigated theoretically and experimentally. It is a p-type semiconductor that embraces a natural direct band gap (~ 1.0 eV) with high hole mobility and electron mobility at room temperature. This report is expected to help develop a new types of carbon-based semiconductor devices with high mobility.

Keywords

Cite

@article{arxiv.1907.03534,
  title  = {Direct Band Gap Semiconducting Holey Graphyne: Structure, Synthesis and Potential Applications},
  author = {Xinghui Liu1 and Soo Min Cho and Shiru Lin and Eunbhin Yun and Eun Hee Baek and Zhongfang Chen and Do Hyun Ryu and Hyoyoung Lee},
  journal= {arXiv preprint arXiv:1907.03534},
  year   = {2019}
}
R2 v1 2026-06-23T10:14:42.216Z