Dirac Fermion in Strongly-Bound Graphene Systems
Abstract
It is highly desirable to integrate graphene into existing semiconductor technology, where the combined system is thermodynamically stable yet maintain a Dirac cone at the Fermi level. Firstprinciples calculations reveal that a certain transition metal (TM) intercalated graphene/SiC(0001), such as the strongly-bound graphene/intercalated-Mn/SiC, could be such a system. Different from free-standing graphene, the hybridization between graphene and Mn/SiC leads to the formation of a dispersive Dirac cone of primarily TM d characters. The corresponding Dirac spectrum is still isotropic, and the transport behavior is nearly identical to that of free-standing graphene for a bias as large as 0.6 V, except that the Fermi velocity is half that of graphene. A simple model Hamiltonian is developed to qualitatively account for the physics of the transfer of the Dirac cone from a dispersive system (e.g., graphene) to an originally non-dispersive system (e.g., TM).
Cite
@article{arxiv.1206.0512,
title = {Dirac Fermion in Strongly-Bound Graphene Systems},
author = {Yuanchang Li and Pengcheng Chen and Gang Zhou and Jia Li and Jian Wu and Bing-Lin Gu and S. B. Zhang and Wenhui Duan},
journal= {arXiv preprint arXiv:1206.0512},
year = {2012}
}
Comments
Apr 25th, 2012 submitted