English

Differential conductance of a saddle-point constriction with a time-modulated gate-voltage

Mesoscale and Nanoscale Physics 2009-11-11 v1

Abstract

The effect of a time-modulated gate-voltage on the differential conductance GG of a saddle-point constriction is studied. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form V0θ(a/2xxc)cos(ωt)V_{0} \theta(a/2-|x-x_{c}|) \cos (\omega t). For ω\hbar\omega less than half of the transverse subband energy level spacing, gate-voltage-assisted (suppressed) feature occurs when the chemical potential μ\mu is less (greater) than but close to the threshold energy of a subband. As μ\mu increases, GG is found to exhibit, alternatively, the assisted and the suppressed feature. For larger ω\hbar\omega, these two features may overlap with one another. Dip structures are found in the suppressed regime. Mini-steps are found in the assisted regime only when the gate-voltage covers region far enough away from the center of the constriction.

Keywords

Cite

@article{arxiv.cond-mat/0603538,
  title  = {Differential conductance of a saddle-point constriction with a time-modulated gate-voltage},
  author = {C. S. Tang and C. S. Chu},
  journal= {arXiv preprint arXiv:cond-mat/0603538},
  year   = {2009}
}

Comments

8 pages, 6 figures