We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 {\deg}C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance analysis respectively. We observe relative permittivities approaching 60 and loss tangents < 10^-2 across the 10^3-10^5 Hz frequency range in the Zr6Nb2O17 and Zr6Ta2O17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.
@article{arxiv.2405.03527,
title = {Dielectric Properties of Disordered A6B2O17 (A = Zr; B = Nb, Ta) Phases},
author = {R. Jackson Spurling and Saeed S. I. Almishal and Joseph Casamento and John Hayden and Ryan Spangler and Michael Marakovits and Arafat Hossain and Michael Lanagan and Jon-Paul Maria},
journal= {arXiv preprint arXiv:2405.03527},
year = {2024}
}