Diagnosing a strong topological insulator by quantum oscillations
Strongly Correlated Electrons
2015-06-18 v2
Abstract
We show how quantum oscillation measurements of surface states in an insulator may allow to diagnose a strong topological insulator and distinguish it from its weak or topologically trivial counterpart. The criterion is defined by the parity of the number of fundamental frequencies in the surface-state quantum oscillation spectrum: an even number of frequencies implies a weak or a topologically trivial insulator, whereas an odd number points to a strong topological insulator. We also discuss various aspects and issues related to applying this criterion in practice.
Keywords
Cite
@article{arxiv.1401.6228,
title = {Diagnosing a strong topological insulator by quantum oscillations},
author = {Revaz Ramazashvili and Frédéric Bègue and Pierre Pujol},
journal= {arXiv preprint arXiv:1401.6228},
year = {2015}
}
Comments
5.5 pages, 2 figures