Although the National Institute of Standards and Technology has measured the intrinsic quantum efficiency of Si and InGaAs APD materials to be above 98 % by building an efficient compound detector, commercially available devices have efficiencies ranging between 15 % and 75 %. This means bandwidth, dark current, cost, and other factors are more important than quantum efficiency for existing applications. This paper systematically examines the generic detection process, lays out the considerations needed for designing detectors for non-classical applications, and identifies the ultimate physical limits on quantum efficiency.
@article{arxiv.quant-ph/0402201,
title = {Detector Efficiency Limits on Quantum Improvement},
author = {Deborah J. Jackson and George M. Hockney},
journal= {arXiv preprint arXiv:quant-ph/0402201},
year = {2009}
}