Delocalization Transition of Disordered Axion Insulator
Abstract
The axion insulator is a higher-order topological insulator protected by inversion symmetry. We show that under quenched disorder respecting inversion symmetry {\it on average}, the topology of the axion insulator stays robust, and an intermediate metallic phase in which states are delocalized is unavoidable at the transition from an axion insulator to a trivial insulator. We derive this conclusion from general arguments, from classical percolation theory, and from the numerical study of a 3D quantum network model simulating a disordered axion insulator through a layer construction. We find the localization length critical exponent near the delocalization transition to be . We further show that this delocalization transition is stable even to weak breaking of the average inversion symmetry, up to a critical strength. We also quantitatively map our quantum network model to an effective Hamiltonian and we find its low energy kp expansion.
Keywords
Cite
@article{arxiv.2010.13796,
title = {Delocalization Transition of Disordered Axion Insulator},
author = {Zhi-Da Song and Biao Lian and Raquel Queiroz and Roni Ilan and B. Andrei Bernevig and Ady Stern},
journal= {arXiv preprint arXiv:2010.13796},
year = {2021}
}
Comments
8+11 pages, 4+6 figures, some references added