Delicate competing electronic states in ultrathin manganite films

Zhaoliang Liao; Rongying Jin; E. W. Plummer; Jiandi Zhang

doi:10.1103/PhysRevB.95.085130

Delicate competing electronic states in ultrathin manganite films

Materials Science 2017-02-28 v1

Authors: Zhaoliang Liao , Rongying Jin , E. W. Plummer , Jiandi Zhang

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Abstract

The coupling between the electrical transport properties of La2/3Sr1/3MnO3 (LSMO) thin films and structural phase transitions of SrTiO3 (STO) substrates at Ts = 105 K has been investigated. We found that the electrical resistivity of LSMO films exhibit a cusp at Ts, which is greatly amplified by tuning films to the verge of metallic and insulating phases, i.e., to the boundary of two delicate competing electronic states. Our results demonstrate that small amounts of strain can tip the subtle balance of competing interactions and tune the electronic properties in correlated electron materials.

Keywords

manganite films electronic states structural phase transitions electrical resistivity strain tuning correlated electron materials LSMO

Cite

@article{arxiv.1701.07933,
  title  = {Delicate competing electronic states in ultrathin manganite films},
  author = {Zhaoliang Liao and Rongying Jin and E. W. Plummer and Jiandi Zhang},
  journal= {arXiv preprint arXiv:1701.07933},
  year   = {2017}
}

Comments

Accepted by Phys. Rev. B

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