Defect induced polarization and dielectic relaxation in Ga$_2$$_-$$_x$Fe$_x$O$_3$
Materials Science
2017-07-12 v1
Abstract
We report results of the dielectric and pyroelectric measurements on solid solutions of GaFeO with x = 0.75, 1.0 and 1.25. These systems exhibit dipolar cluster glass behavior in addition to the spin glass behavior making them belong to a class of few systems showing multiglass behavior. Presence of two contributing relaxations in dielectric data are observed possibly due to the flipping and breathing of polar nano-clusters. Further, emergence of polarization in these systems can be understood in terms of thermally stimulated depolarization current (TSDC) effect caused by defect dipoles possibly associated with charged oxygen vacancies rather than the intrinsic ferroelectric behavior.
Keywords
Cite
@article{arxiv.1707.03204,
title = {Defect induced polarization and dielectic relaxation in Ga$_2$$_-$$_x$Fe$_x$O$_3$},
author = {Sudipta Mahana and C. Dhanasekhar and A. Venimadhav and D. Topwal},
journal= {arXiv preprint arXiv:1707.03204},
year = {2017}
}
Comments
5 pages, 4 figures