English

d0 Perovskite-Semiconductor Electronic Structure

Materials Science 2013-05-29 v1 Mesoscale and Nanoscale Physics

Abstract

We address the low-energy effective Hamiltonian of electron doped d0 perovskite semiconductors in cubic and tetragonal phases using the k*p method. The Hamiltonian depends on the spin-orbit interaction strength, on the temperature-dependent tetragonal distortion, and on a set of effective-mass parameters whose number is determined by the symmetry of the crystal. We explain how these parameters can be extracted from angle resolved photo-emission, Raman spectroscopy, and magneto-transport measurements and estimate their values in SrTiO3.

Keywords

Cite

@article{arxiv.1010.3090,
  title  = {d0 Perovskite-Semiconductor Electronic Structure},
  author = {R. Bistritzer and G. Khalsa and A. H. MacDonald},
  journal= {arXiv preprint arXiv:1010.3090},
  year   = {2013}
}
R2 v1 2026-06-21T16:28:52.100Z