By generalizing the classical linear response theory of stick percolation to nonlinear regime, we find that the drain current of a Nanobundle Thin Film Transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LS g(LS/LC, rho_S * LS * LS) f(VG, VD), where A is a technology-specific constant, g is function of geometrical factors like stick length (LS), channel length (LC), and stick density (rho_S) and f is a function of drain (VD) and gate (VG) biasing conditions. This scaling formula implies that the measurement of full I-V characteristics of a single NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.
@article{arxiv.cond-mat/0603033,
title = {Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective},
author = {N. V. Pimparkar and S. Kumar and J. Y. Murthy and M. A. Alam},
journal= {arXiv preprint arXiv:cond-mat/0603033},
year = {2009}
}