English

Current-induced nanogap formation and graphitization in boron-doped diamond films

Mesoscale and Nanoscale Physics 2012-12-12 v1 Materials Science

Abstract

A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation.

Keywords

Cite

@article{arxiv.1212.2235,
  title  = {Current-induced nanogap formation and graphitization in boron-doped diamond films},
  author = {V. Seshan and C. R. Arroyo and A. Castellanos-Gomez and F. Prins and M. L. Perrin and S. D. Janssens and K. Haenen and M. Nesládek and E. J. R. Sudhölter and L. C. P. M. de Smet and H. S. J. van der Zant and D. Dulic},
  journal= {arXiv preprint arXiv:1212.2235},
  year   = {2012}
}

Comments

14 pages 4 figures + 1 supplemental figure