Graphene nanomeshes (GNM's) formed by the creation of pore superlattices in graphene, are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional eV band gaps. The utility of GNM's would be markedly increased if a scheme to stably and controllably dope them was developed. In this work, a chemically-motivated approach to GNM doping based on selective pore-perimeter passivation and subsequent ion chelation is proposed. It is shown by first-principles calculations that ion chelation leads to stable doping of the passivated GNM's -- both {\it n}- and {\it p}-doping are achieved within a rigid-band picture. Such chelated or ``crown'' GNM structures are stable, high mobility semiconducting materials possessing intrinsic doping-concentration control; these can serve as building blocks for edge-free graphene nanoelectronics including GNM-based complementary metal oxide semiconductor (CMOS)-type logic switches.
@article{arxiv.1311.3660,
title = {Crown Graphene Nanomeshes: Highly Stable Chelation-Doped Semiconducting Materials},
author = {Ahmed A. Maarouf and Razvan A. Nistor and Ali Afzali-Ardakani and Marcelo A. Kuroda and Dennis M. Newns and Glenn J. Martyna},
journal= {arXiv preprint arXiv:1311.3660},
year = {2013}
}