Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective
Abstract
We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of Typical-Medium Theory (TMT-DMFT) - the simplest extension of dynamical mean field theory (DMFT) capable of incorporating Anderson localization effects. By making use of previous scaling studies of Anderson impurity models close to the metal-insulator transition, we solve this problem analytically and reveal the dependence of the critical behavior on the particle-hole symmetry. Our main result is that, for sufficiently strong disorder, the Mott-Anderson transition is characterized by a precisely defined two-fluid behavior, in which only a fraction of the electrons undergo a "site selective" Mott localization; the rest become Anderson-localized quasiparticles.
Cite
@article{arxiv.0811.4612,
title = {Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective},
author = {M. C. O. Aguiar and V. Dobrosavljevic and E. Abrahams and G. Kotliar},
journal= {arXiv preprint arXiv:0811.4612},
year = {2009}
}
Comments
4+ pages, 4 figures, v2: minor changes, accepted for publication in Phys. Rev. Lett