Two-dimensional ferromagnetic (FM) half-metals are promising candidates for advanced spintronic devices with small-size and high-capacity. Motivated by recent report on controlling synthesis of FM Cr3Te4 nanosheet, herein, to explore the potential application in spintronics, we designed spintronic devices based on Cr3X4 (X=Se, Te) monolayers and investigated their spin transport properties. We found that Cr3Te4 monolayer based device shows spin filtering and dual spin diode effect when applying bias voltage, while Cr3S4 monolayer is an excellent platform to realize a spin valve. The different transport properties are primarily ascribed to the semiconducting spin channel, which is close to and away from the Fermi level in Cr3Te4 and Cr3Se4 monolayers, respectively. Interestingly, the current in monolayer Cr3Se4 based device also displays a negative differential resistance effect (NDRE) and a high magnetoresistance ratio (up to 2*103). Moreover, we found thermally induced spin filtering effect and NDRE in Cr3Se4 junction when applying temperature gradient instead of bias voltage. These theoretical findings highlight the potential of Cr3X4 (X=Se, Te) monolayers in spintronic applications and put forward realistic materials to realize nanosale spintronic device.
@article{arxiv.2207.12679,
title = {Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve},
author = {Qihong Wu and Rongkun Liu and Zhanjun Qiu and Dengfeng Li and Jie Li and Xiaotian Wang and Guangqian Ding},
journal= {arXiv preprint arXiv:2207.12679},
year = {2023}
}