Coulomb pairing of electrons in thin films with strong spin-orbit interaction

In low-dimensional structures with strong Rashba spin-orbit interaction (SOI), the Coulomb fields between moving electrons produce a SOI component of the pair interaction that competes with the potential Coulomb repulsion. If the Rashba SOI constant of the material is sufficiently high, the total electron-electron interaction becomes attractive, which leads to the formation of the two-electron bound states. We show that because of the dielectric screening in a thin film the binding energy is significantly higher as compared to the case of the bulk screening.