Coulomb Drag and High Resistivity Behavior in Double Layer Graphene
Mesoscale and Nanoscale Physics
2011-06-14 v2 Materials Science
Strongly Correlated Electrons
Abstract
We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.
Keywords
Cite
@article{arxiv.1105.5399,
title = {Coulomb Drag and High Resistivity Behavior in Double Layer Graphene},
author = {N. M. R. Peres and J. M. B. Lopes dos Santos and A. H. Castro Neto},
journal= {arXiv preprint arXiv:1105.5399},
year = {2011}
}
Comments
The version v2 has an extra figure as supplementary information