Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4

M. Uchida; Y. F. Nie; P. D. C. King; C. H. Kim; C. J. Fennie; D. G. Schlom; K. M. Shen

doi:10.1103/PhysRevB.90.075142

Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4

Strongly Correlated Electrons 2015-06-22 v1 Materials Science

Authors: M. Uchida , Y. F. Nie , P. D. C. King , C. H. Kim , C. J. Fennie , D. G. Schlom , K. M. Shen

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Abstract

We employ molecular beam epitaxy to stabilize Ba2IrO4 thin films and utilize in situ angle-resolved photoemission spectroscopy to investigate the evolution of its electronic structure through the Neel temperature TN. Our measurements indicate that dispersions of the relativistic Jeff=1/2 and 3/2 bands exhibit an unusual dichotomy in their behavior through the Neel transition. Although the charge gap survives into the paramagnetic state, only the Jeff=1/2 state exhibits a strong temperature dependence and its gap softens with increasing temperature approaching TN, while the nearly fully occupied Jeff=3/2 state which remains nearby in energy exhibits negligible changes with temperature.

Keywords

ba2iro4 thin films jeff=1/2 state jeff=3/2 state neel transition angle-resolved photoemission spectroscopy charge gap mott insulator

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@article{arxiv.1408.6314,
  title  = {Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4},
  author = {M. Uchida and Y. F. Nie and P. D. C. King and C. H. Kim and C. J. Fennie and D. G. Schlom and K. M. Shen},
  journal= {arXiv preprint arXiv:1408.6314},
  year   = {2015}
}

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18 pages, 8 figures

Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4

Abstract

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