The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley-Read-Hall (SRH) recombination. To demonstrate this effect we model, design, grow, fabricate, and test a GaInAsP LED (λ≈ 1330nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional n+-n-p+ double hetero-junction LED, the dopant profile near the n-p+ hetero-structure of the new design displaces the built-in electric field in such a way as to suppress the J02 space charge recombination current. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.
@article{arxiv.2001.10948,
title = {Controlling the dopant profile for SRH suppression at low current densities in $\lambda \approx$ 1330nm GaInAsP light-emitting diodes},
author = {Parthiban Santhanam and Wei Li and Bo Zhao and Chris Rogers and Dodd Joseph Gray and Phillip Jahelka and Harry A. Atwater and Shanhui Fan},
journal= {arXiv preprint arXiv:2001.10948},
year = {2020}
}