Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2 and alloyed MoxW1-xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1-xTe2 with controllable thickness and chemical composition ratios. The atomic structure of monolayer MoxW1-xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy (STEM). Importantly, two different transport behaviors including superconducting and Weyl semimetal (WSM) states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples respectively. Our results show that the electrical properties of MoxW1-xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and shed light on the design of device with topological multicomponent TMDCs materials.
@article{arxiv.2107.09482,
title = {Controlled synthesis of MoxW1-xTe2 atomic layers with emergent quantum states},
author = {Ya Deng and Peiling Li and Chao Zhu and Jiadong Zhou and Xiaowei Wang and Jian Cui and Xue Yang and Li Tao and Qingsheng Zeng and Ruihuan Duan and Qundong Fu and Chao Zhu and Jianbin Xu and Fanming Qu and Changli Yang and Xiunian Jing and Li Lu and Guangtong Liu and Zheng Liu},
journal= {arXiv preprint arXiv:2107.09482},
year = {2021}
}