Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths
Abstract
A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.
Cite
@article{arxiv.2203.09240,
title = {Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths},
author = {Konstantinos Pantzas and Sylvain Combrié and Myriam Bailly and Raphaël Mandouze and Francesco Rinaldi Talenti and Abdelmounaim Harouri and Bruno Gérard and Grégoire Beaudoin and Luc Le Gratiet and Gilles Patriarche and Alfredo de Rossi and Yoan Léger and Isabelle Sagnes and Arnaud Grisard},
journal= {arXiv preprint arXiv:2203.09240},
year = {2022}
}
Comments
21 pages, 6 figures