We present an ab initio study of the structural, electronic, and quantum transport properties of B-N-complex edge-doped graphene nanoribbons (GNRs). We find that the B-N edge codop-ing is energetically a very favorable process and furthermore can achieve novel doping effects that are absent for the single B or N doping. The compensation effect between B and N is predicted to generally recover the excellent electronic transport properties of pristine GNRs. For the zigzag GNRs, however, the spatially localized B-N defect states selectively destroy the doped-side spin-polarized GNR edge currents at the valence and conduction band edges. We show that the energetically and spatially spin-polarized currents survive even in the fully ferromagnetic metallic state and heterojunction configurations. This suggests a simple yet ef-ficient scheme to achieve effectively smooth GNR edges and graphene-based spintronic de-vices.
@article{arxiv.1407.2166,
title = {Conductance recovery and spin polarization in boron and nitrogen codoped graphene nanoribbons},
author = {Seong Sik Kim and Han Seul Kim and Hyo Seok Kim and Yong-Hoon Kim},
journal= {arXiv preprint arXiv:1407.2166},
year = {2015}
}