We provide a comprehensive analysis of the prominent tight-binding (TB) models for transition metal dichalcogenides (TMDs) available in the literature. We inspect the construction of these TB models, discuss their parameterization used and conduct a thorough comparison of their effectiveness in capturing important electronic properties. Based on these insights, we propose a novel TB model for TMDs designed for enhanced computational efficiency. Utilizing MoS2 as a representative case, we explain why specific models offer a more accurate description. Our primary aim is to assist researchers in choosing the most appropriate TB model for their calculations on TMDs.
@article{arxiv.2312.00498,
title = {Comparative Analysis of Tight-Binding models for Transition Metal Dichalcogenides},
author = {Bert Jorissen and Lucian Covaci and Bart Partoens},
journal= {arXiv preprint arXiv:2312.00498},
year = {2024}
}
Comments
29 pages, 8 figures, corrected parameters in appendix